Lune

HPCA2025顶会

Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yüksel, Oguzhan Canpolat, Haocong Luo, Geraldo F. Oliveira, A. Giray Yaglikçi, Minesh Patel, Onur Mutlu

2025年份
15被引次数
9顶会引用

摘要

Modern DRAM chips are subject to read disturbance errors. These errors manifest as security-critical bitflips in a victim DRAM row that is physically nearby a repeatedly activated (opened) aggressor row (RowHammer) or an aggressor row that is kept open for a long time (RowPress). State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance threshold (RDTR D T) (e.g., the number of aggressor row activations needed to induce the first RowHammer or RowPress bitflip) of every DRAM row (of which there are millions or billions in a modern system) to prevent read disturbance bitflips securely and with low overhead. We experimentally demonstrate for the first time that the RDT of a DRAM row significantly and unpredictably changes over time. We call this new phenomenon variable read disturbance (VRD). Our extensive experiments using 160 DDR4 chips and 4 HBM2 chips from three major manufacturers yield three key observations. First, it is very unlikely that relatively few RDT measurements can accurately identify the RDT of a DRAM row. The minimum RDT of a DRAM row appears after tens of thousands of measurements (e.g., up to 94,467), and the minimum RDT of a DRAM row is 3.5×3.5 \times smaller than the maximum RDT observed for that row. Second, the probability of accurately identifying a row’s RDT with a relatively small number of measurements reduces with increasing chip density or smaller technology node size. Third, data pattern, the amount of time an aggressor row is kept open, and temperature can affect the probability of accurately identifying a DRAM row’s RDT. Our empirical results have implications for the security guarantees of read disturbance mitigation techniques: if the RDT of a DRAM row is not identified accurately, these techniques can easily become insecure. We discuss and evaluate using a guardband for RDT and error-correcting codes for mitigating read disturbance bitflips in the presence of RDTs that change unpredictably over time. We conclude that a>10%a\gt 10 \% guardband for the minimum observed RDT combined with SECDED or Chipkill-like SSC error-correcting codes could prevent read disturbance bitflips at the cost of large read disturbance mitigation performance overheads (e.g., 45% performance loss for an RDT guardband of 50%50 \%). We hope and believe future work on efficient online profiling mechanisms and configurable read disturbance mitigation techniques could remedy the challenges imposed on today’s read disturbance mitigations by the variable read disturbance phenomenon.

问问这篇 Paper

智能体会读完全文。

Lune 把这篇 Paper 索引到了最后一个公式,引用它的顶会 Paper 也一样。你提问,回答直接引用原文。

可以从这些问题问起

智能体调用

Luneget_paper_fulltext

在 Lune 里问

免费开始,无需绑卡

lune papers fulltext 2f4f8ace-e187-4bb7-ae1e-1559265d6568

引用它的顶会 Paper9

问问它们各自怎么用它

它引用的顶会 Paper59

相关 Paper

黄昏的海面,两侧是细线勾勒的悬崖