Impact of Voltage Scaling on Soft Errors Susceptibility of Multicore Server CPUs
Dimitris Agiakatsikas, George Papadimitriou, Vasileios Karakostas, Dimitris Gizopoulos, Mihalis Psarakis, Camille Bélanger-Champagne, Ewart Blackmore
摘要
Microprocessor power consumption and dependability are both crucial challenges that designers have to cope with due to shrinking feature sizes and increasing transistor counts in a single chip. These two challenges are mutually destructive: microprocessor reliability deteriorates at lower supply voltages that save power. An important dependability metric for microprocessors is their radiation-induced soft error rate (SER). This work goes beyond state-of-the-art by assessing the trade-offs between voltage scaling and soft error rate (SER) on a microprocessor system executing workloads on real hardware and a full software stack setup. We analyze data from accelerated neutron radiation testing for nominal and reduced microprocessor operating voltages. We perform our experiments on a 64-bit Armv8 multicore microprocessor built on 28 nm process technology. We show that the SER of SRAM arrays can increase up to 40.4% when the device operates at reduced supply voltage levels. To put our findings into context, we also estimate the radiation-induced Failures in Time (FIT) rate of various workloads for all the studied voltage levels. Our results show that the total and the Silent Data Corruptions (SDC) FIT of the microprocessor operating at voltage-scaled conditions can be 6.6 × and 16 × larger than at the nominal voltage, respectively. Moreover, changes in the microprocessor’s clock frequency do not have a noticeable impact on its soft error susceptibility. The findings of this work can aid computer architects in striking a balance between power and dependability, thus, designing more robust and efficient microprocessors.
问问这篇 Paper
智能体会读完全文。
Lune 把这篇 Paper 索引到了每一个公式,引用它的顶会 Paper 也一样。你提问,回答直接引用原文。
引用它的顶会 Paper2
- Harpocrates: Breaking the Silence of CPU Faults through Hardware-in-the-Loop Program GenerationNikos Karystinos, Odysseas Chatzopoulos, George-Marios Fragkoulis, George Papadimitriou 等ISCA 2024 · 被引用 28 次
- Cerberus: Cross-Layer ECC Co-Design for Robust and Efficient Memory ProtectionJunhwan Kim, Seunghyun Kim, Yesin Ryu, Saeid Gorgin 等ISCA 2026 · 被引用 1 次
它引用的顶会 Paper1
相关 Paper
- Reliability-Aware RunaheadAjeya Naithani, Lieven EeckhoutHPCA 2022 · 被引用 2 次
- DelayAVF: Calculating Architectural Vulnerability Factors for Delay FaultsPeter W. Deutsch, Vincent Quentin Ulitzsch, Sudhanva Gurumurthi, Vilas Sridharan 等MICRO 2024 · 被引用 14 次
- S2RAM PUF: An Ultra-low Power Subthreshold SRAM PUF with Zero Bit Error RateLi Ni, Jiliang ZhangDAC 2024 · 被引用 28 次
- SSRESF: Sensitivity-aware Single-particle Radiation Effects Simulation Framework in SoC Platforms based on SVM AlgorithmMeng Liu, Shuai Li, Fei Xiao, Ruijie Wang 等DAC 2024 · 被引用 1 次
- A Cross-Layer Power and Timing Evaluation Method for Wide Voltage ScalingWenjie Fu, Leilei Jin, Ming Ling, Yu Zheng 等DAC 2020 · 被引用 5 次
